(China (Mainland))
Product Summary
The NAND512W3A2CN6 is a 512 Mbit, 1.8V/3V, NAND Flash Memory.
Parametrics
Absolute maximum ratings: (1)Temperature Under Bias: – 50 to 125 ℃; (2)Storage Temperature: – 65 to 150 ℃; (3)Input or Output Voltage: – 0.6 to 2.7 V at 1.8V devices, – 0.6 to 4.6 V at 3 V devices; (4)Supply Voltage: – 0.6 to 2.7 V at 1.8V devices, – 0.6 to 4.6 V at 3 V devices.
Features
Features: (1)high density nand flash memories; (2)nand interface; (3)supply voltage: 1.8V device: VDD = 1.7 to 1.95V, 3.0V device: VDD = 2.7 to 3.6V; (4)page read / program: Random access: 12μs (max), Sequential access: 50ns (min), Page program time: 200μs (typ); (5)copy back program mode: Fast page copy without external buffering; (6)fast block erase: Block erase time: 2ms (Typ); (7)status register; (8)electronic signatur.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 NAND512W3A2CN6E |
STMicroelectronics |
Flash 512 MBIT MEM ARRAY NAND FLASH MEMORY |
Data Sheet |
Negotiable |
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NAND512W3A2CN6F |
STMicroelectronics |
Flash 512 MB 528 Byte 264 word pg 1.8V/3V |
Data Sheet |
Negotiable |
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